Since the discovery of graphene, the discoveries and research of new 2D materials has attained a lot of inertia. In our experimental setups, we mastered preparation and doping of graphene on silicon carbide and metal supports. We regularly use it in our experiments, whenever a low-reactivity substrate is needed. On the other hand, when the electrical conductance of the substrate needs to be decreased,we are able to synthesize semi-insulating films of 2D materials like Boron Nitride or Iron oxide. In parallel, we investigate potential formation of 2D oxides directly from their respective bulk materials, i.e. FeO2 from hematite.

M. Telychko, P. Mutombo, M. Ondráček, P. Hapala, F.C. Bocquet, J. Kolorenč, M. Vondráček, P. Jelínek, M. Švec
Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
ACS Nano 8 (2014) 7318 - 7324

M. Telychko, P. Mutombo, P. Merino, P. Hapala, M. Ondráček, F.C. Bocquet, J. Sforzini, O. Stetsovych, M. Vondráček, P. Jelínek, M. Švec
Electronic and Chemical Properties of Donor, Acceptor Centers in Graphene
ACS Nano 9 (2015) 9180 - 9187

B. de la Torre, M. Švec, P. Hapala, J. Redondo, O. Krejčí, R. Lo, D. Manna, A. Sarmah, D. Nachtigallová, J. Tuček, P. Błoński, M. Otyepka, R. Zbořil, P. Hobza, P. Jelínek
Non-covalent control of spin-state in metal-organic complex by positioning on N-doped graphene
Nat. Commun. 9 (2018) 2831(1) - 2831(9)

J. Redondo, M. Telychko, P. Procházka, M. Konečný, J. Berger, M. Vondráček, J. Čechal, P. Jelínek, M. Švec
Simple device for the growth of micrometer-sized monocrystalline single-layer graphene on SiC (0001)
J. Vac. Sci. Technol. A 36 (2018) 031401-1 - 031401-6